Strathmore University Library Search for 'an:7320'

New Jersey : World Scientific, .
viii, 335 p. : , Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. 26 cm..

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Quantum dots

River Edge, N.J. : World Scientific, .
vii, 205 p. :

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CMOS RF modeling, characterization and applications

River Edge, N.J. : World Scientific, .
xi, 409 p. :

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Silicon carbide power devices

By Baliga, B. Jayant,.
New Jersey : World Scientific, .
xxi, 503 p. : 24 cm..

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SiC materials and devices. Vol. 1 /

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Intersubband transitions in quantum structures

New York : McGraw-Hill, .
xvi, 431 p. : 24 cm..

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Intersubband transitions in quantum structures

New York : McGraw-Hill, .
xvi, 431 p. : 24 cm..

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Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

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Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

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Intersubband transitions in quantum structures

New York : McGraw-Hill, .
xvi, 431 p. : 24 cm..

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Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

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Semiconductor macroatoms basic physics and quantum-device applications /

London : Imperial College Press, .
xi, 319 p. :

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Semiconductor heterojunctions and nanostructures

By Manasreh, Mahmoud Omar..
New York : McGraw-Hill, .
xx, 554 p. :

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High-speed heterostructure devices from device concepts to circuit modeling /

By Roblin, Patrick,.
Cambridge ; | New York : Cambridge University Press, .
xxxiv, 688 p. :

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Compound semiconductor bulk materials and characterizations

By Oda, O..
New Jersey : World Scientific, .
xv, 538 p. :

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