Strathmore University Library Search for 'an:120599'

GaN-based materials and devices growth, fabrication, characterization and performance /

Singapore ; | River Edge, N.J. : World Scientific, .
x, 284 p. :

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Advanced semiconductor devices proceedings of the 2006 Lester Eastman Conference, Cornell, Ithaca, NY, USA, 26 August 2006 /

Singapore ; | Hackensack, NJ : World Scientific, .
viii, 192 p. : , "Originally the conference was known as the IEEE/Cornell Conference on High Performance Devices."--Preface.

]]> Place hold on Advanced semiconductor devices

Quantum dots

River Edge, N.J. : World Scientific, .
vii, 205 p. :

]]> Place hold on Quantum dots

CMOS RF modeling, characterization and applications

River Edge, N.J. : World Scientific, .
xi, 409 p. :

]]> Place hold on CMOS RF modeling, characterization and applications

Design of high-speed communication circuits

New Jersey : World Scientific, .
v, 222 p. :

]]> Place hold on Design of high-speed communication circuits

Frontiers in electronics proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 /

New Jersey : World Scientific, .
xxiii, 749 p. :

]]> Place hold on Frontiers in electronics

SiC materials and devices. Vol. 1 /

New Jersey : World Scientific, .
viii, 335 p. : , Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. 26 cm..

]]> Place hold on SiC materials and devices.

Transformational science and technology for the current and future force proceedings of the 24th US Army Science Conference /

New Jersey : World Scientific, .
xxiii, 576 p. :

]]> Place hold on Transformational science and technology for the current and future force

High-speed optical transceivers integrated circuits designs and optical devices techniques /

Hackensack, NJ : World Scientific, .
xii, 704 p. : 26 cm..

]]> Place hold on High-speed optical transceivers

Physics and modeling of tera-and nano-devices

Singapore : World Scientific, .
vii, 184 p. :

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Terahertz science and technology for military and security applications

Hackensack, NJ : World Scientific, .
viii, 251 p. ; 26 cm..

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Physics and modeling of tera-and nano-devices

Singapore : World Scientific, .
vii, 184 p. :

]]> Place hold on Physics and modeling of tera-and nano-devices

Advanced semiconductor devices proceedings of the 2006 Lester Eastman Conference, Cornell, Ithaca, NY, USA, 26 August 2006 /

Singapore ; | Hackensack, NJ : World Scientific, .
viii, 192 p. : , "Originally the conference was known as the IEEE/Cornell Conference on High Performance Devices."--Preface.

]]> Place hold on Advanced semiconductor devices

Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability /

[River Edge, NJ] : World Scientific, .
ix, 270 p. : 26 cm..

]]> Place hold on Oxide reliability

Quantum dots

River Edge, N.J. : World Scientific, .
vii, 205 p. :

]]> Place hold on Quantum dots

CMOS RF modeling, characterization and applications

River Edge, N.J. : World Scientific, .
xi, 409 p. :

]]> Place hold on CMOS RF modeling, characterization and applications

Design of high-speed communication circuits

New Jersey : World Scientific, .
v, 222 p. :

]]> Place hold on Design of high-speed communication circuits

Frontiers in electronics proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 /

New Jersey : World Scientific, .
xxiii, 749 p. :

]]> Place hold on Frontiers in electronics

SiC materials and devices. Vol. 1 /

]]> Place hold on SiC materials and devices.

Transformational science and technology for the current and future force proceedings of the 24th US Army Science Conference /

New Jersey : World Scientific, .
xxiii, 576 p. :

]]> Place hold on Transformational science and technology for the current and future force

High-speed optical transceivers integrated circuits designs and optical devices techniques /

Hackensack, NJ : World Scientific, .
xii, 704 p. : 26 cm..

]]> Place hold on High-speed optical transceivers

Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

]]> Place hold on Breakdown phenomena in semiconductors and semiconductor devices

Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

]]> Place hold on Breakdown phenomena in semiconductors and semiconductor devices

Radiation defect engineering

By Kozlovskiĭ, V. V..
New Jersey ; | London : World Scientific, .
viii, 253 p. : , Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005.

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Breakdown phenomena in semiconductors and semiconductor devices

By Levinshteĭn, M. E..
New Jersey ; | London : World Scientific, .
xiii, 208 p. :

]]> Place hold on Breakdown phenomena in semiconductors and semiconductor devices

High performance devices proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004 /

New Jersey ; | London : World Scientific, .
xvii, 295 p. :

]]> Place hold on High performance devices