01328nam a22003134a 4500001001200000003000800012005001700020006001900037007001500056008004100071020001500112040002100127035002100148050003000169082001900199245013400218260005000352300003300402490005600435504004100491533015200532650004500684650003400729655002900763700001700792710001700809830005700826856013100883ebr10201190CaPaEBR20260707181706.0m        u        cr cn|||||||||020514s2002    njua    sb    000 0 eng    z9810248423  aCaPaEBRcCaPaEBR  a(OCoLC)64768343714aTK7871.99.M44bO95 2002eb04a621.39/73222100aOxide reliabilityh[electronic resource] :ba summary of silicon oxide wearout, breakdown, and reliability /ceditor, D.J. Dumin.  a[River Edge, NJ] :bWorld Scientific,cc2002.  aix, 270 p. :bill. ;c26 cm.1 aSelected topics in electronics and systems ;vv. 23  aIncludes bibliographical references.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2009.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aMetal oxide semiconductorsxReliability. 0aSilicon oxidexDeterioration. 7aElectronic books.2local1 aDumin, D. J.2 aebrary, Inc. 0aSelected topics in electronics and systems ;vv. 23.40uhttp://site.ebrary.com/lib/strathmore/Doc?id=10201190zAn electronic book accessible through the World Wide Web; click to view